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SILICON HYPERABRUPT VARACTOR DIODE
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Varactor
Diode is Variable reactor or the Variable capacitance
diode of the reverse biased PN Junction. It is employed
in tuning operation by varying the voltage at the
junction capacitance. It is used in tuning elements and
frequency multiplication.The specified application of
Silicon Hyper Abrupt Varactor Diode in tuning are
summerised below: Suitable for 1:1 replacement for tuning in electronic tuners (Colour TV) or applications in telecommunications and Electronics in frequency range of 54 MHz to 850 MHz . In the recent past, a very high growth of the electronic industry, particularly the Television industry has ben observed in the developing nations owing to the increasing standard of living as well as increasing purchasing power, availability of telecommunications through satelite to common people. As a result there has been a steep rise in the production of and sales of TV recievers in India and many other developing countries. The product has only application in television tuning, and therefore with increase in demand of TV recievers the demand of the diode is also expected to be increasing. Presently such kind of diodes are imported to meet the demand. The process developed by Central Electronic Engineering Research Institute, Pilani has developed a state-of-the-art technology for manufacture of Silicon Hyoerabrupt Varacter Diode which would be most suitable for exhisting diode manufacturers. The process involved in the manufacture of Varactor diode employs a epitaxial growth technique which uses substrate doping profiles. The variation of junction capacitance to reverse bias voltage and the doping profiles are specific to the Applications. SALIENT FEATURES
PROCESS The process involves only three thermal steps, two masks, two implantation (or one implantation and one boron diffusion - BN source) and one metallization to accomplish fabrication of the diodes. Thus the process steps have been reduced drastically to ease manufacturing of this double diffused device structure. |
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SPECIFICATION :
The product has been tested by Bharat Electronics Ltd. and is found to be equivalent of European devices (Philips ITTBB221, BB222, BB105B, BB222):
The detail specification of the product are :
| Reverse breakdown voltage | > 40 Volts |
| Capacitance(f = 1 MHZ) | |
| At Reverse Voltage 1 Volt | 17.0 PF |
| (VR) = 3 volts | Type 11.0 pf. |
| (VR) = 25 Volts | > 1.8 pf. < 2.8 pf. |
| Capacitance
Ratio (f = 1 Mhz) C(VR = 3)/ C (VR = 25) |
4.2 - 5.4 |
| Reverse Current VR = 30 volts | <10 nA |
| Tuner Gain (TO - 92 package) (for channel 2 to 12 ) | 38 dB to 23 dB |
NRDC
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Services offered by NRDC
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