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RDSO
SPECIFICATION NO. SPEC/E-20/04(Rev .3)
The
IGBT (Insulated Gate Bipolar Transistor) represents the union of a
power MOSFET and a power bipolar (BJT) transistor, incorporating the
best features of each.
But
while the MOSFET can be used in applications exceeding 1 MHz, the
fastest IGBTs are limited to only a fraction of that.
Therefore,
the only real drawback of the IGBT is its switching speed. Yet the
conduction characteristics of the IGBT really outshine those of the
power MOSFET, especially at voltages greater than about 200V.
MODEL:
PHOTON
This
is the design and development of IGBT based Booster_inverter Technology.
It
works on the principle of “Chopper and Inverter” technique.
It
evolves the chopping of the input voltage by using IGBT’s at high
frequency to generate a high DC link voltage. This DC link voltage
is applied to the
Inverter input. The inverter Converts this DC Link voltage into
3-phase AC Supply. The
system
Input:
90V to 140 V DC with 15% ripples Output:415V
+/- 5%, 3 Phase Ac 50 Hz +3% The system is dependant on the following Design parameters.
This
Inverter 25KVA consists of
The
110VDC nominal input voltage from the coach battery and
Alternator-Rectifier cum regulator
is converted to 415VAC 3 Phase., 50Hz PWM Sine wave Output. Power
Devices IGBT’s are used in both in Booster and inverter Sections. This
will run the Air-conditioning plant of the Railway Coaches. The Inverter has to meet high Current requirements of the Compressor Cut in and this is a very critical aspect of the design.
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